New paper appeared on the arXiv

Correlation-driven Lifshitz transition and orbital order in a two-band Hubbard model
​The role of orbital degrees of freedom and its interplay with the Mott physics in correlated materials has lately received a renewed interest, thanks to the experimental results obtained for different compounds. Motivated by this, we investigated the ground state properties of a simplified model which can capture the essential physics of these systems.

We solved a two bands model with different bandwidths in the non-perturbative regime, using DMFT and analysed its behavior at weak- and strong-coupling by means of suitable expansions. At quarter filling, i.e. one electron per site, the presence of the interaction leads to the formation of an effective crystal field, not present in the original Hamiltonian, which ultimately favours the occupation of the wider band. For small bandwidth ratios an increase of the effective crystal field can drive a topological Lifshitz transition from a two- band to a one-band metal. For larger interactions the system undergoes a metal-insulator transition to a Mott state. The properties of such Mott insulator are significantly affected by the interplay of orbital and magnetic ordering, which we analyse in details. For larger values of the bandwidth ratio the system shows a direct first-order transition from the two- band metal to an orbitally ordered Mott state. Surprisingly, the metallic phase hosts a regime where the wide band gets more correlated than the narrow one, contrary to the orbital selective Mott scenario. 

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